Photocorrosion in solar cells

It is known that the photoelectrochemical cell (PEC), which is composed of a photoelectrode, a redox electrolyte, and a counter electrode, shows a solar light-to-current conversion efficiency of more than 10%. However, photoelectrodes such as n- and p-Si, n-and p-GaAs, n- and p-InP, and n-CdS frequently cause photocorrosion in the electrolyte solution under irradiation. This results in a poor cell stability therefore, many efforts have been made worldwide to develop a more stable PEC. 

The main obstacle to creating liquid junction solar cells is photocorrosion of semiconductor electrodes, which reduces considerably their lifetime. In order to prevent, for example, anodic photocorrosion, a well-reversible redox couple is introduced into an electrolyte solution, so that the reaction of oxidation of the red component competes for photoholes with the reaction of photodecomposition of the electrode material (see Section IV.2). With the aid of this method, photocorrosion has been practically prevented in certain types of photocells and the duration of their continuous operation has been increased up to about one year. Yet, there are other, more subtle mechanisms of electrode degra-dation, which has hitherto prevented the lifetime of photoelectrochemical cells from becoming comparable with the 20-year lifetime of solid-state solar cells. 

Furthermore, this later work draws a possible connection between the anodic suifidization process and photocorrosion of ll-VI solar cells in polysulfide electrolytes. If this connection could be established, a well of knowledge could be applied to gain a better understanding of this passivation process. (For example Ref 88-90). 

The theoretical solar conversion efficiency of a regenerative photovoltaic cell with a semiconductor photoelectrode therefore depends on the model used to describe the thermodynamic and kinetic energy losses. The CE values, which consider all the mentioned losses can generally only be estimated the full line in Fig. 5.65 represents such an approximation. Unfortunately, the materials possessing nearly the optimum absorption properties (Si, InP, and GaAs) are handicapped by their photocorrosion sensitivity and high price. 

The stability of semiconductor electrodes, their resistance to photocorrosion, become an especially urgent problem in connection with ever-extending photoelectrochemical applications of semiconductors. This refers, first of all, to electrodes of photoelectrochemical cells for solar energy conversion. 

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