Phase silicon carbide-aluminum nitride

A. Zangvil and R. Ruh, Phase relationships in the silicon carbide-aluminum nitride system, J. Am. Ceram. Soc. 1988, 71, 884-890. 

Numerous ceramics are deposited via chemical vapor deposition. Oxide, carbide, nitride, and boride films can all be produced from gas phase precursors. This section gives details on the production-scale reactions for materials that are widely produced. In addition, a survey of the latest research including novel precursors and chemical reactions is provided. The discussion begins with the mature technologies of silicon dioxide, aluminum oxide, and silicon nitride CVD. Then the focus turns to the deposition of thin films having characteristics that are attractive for future applications in microelectronics, micromachinery, and hard coatings for tools and parts. These materials include aluminum nitride, boron nitride, titanium nitride, titanium dioxide, silicon carbide, and mixed-metal oxides such as those of the perovskite structure and those used as high To superconductors. 

The other method of developing fine, spherical particles is through the use of plasma techniques which may involve a phjrsical phenomenon or a chemical reaction [105]. In the former case, a simple spherodizing process takes place when irregular shaped powder is introduced into the plasma which melts it and then vaporizes it to form uniform spheres. When a chemical reaction is involved, the reactants in the solid or gaseous form in contact with the plasma are allowed to react in the vapor phase and the products are allowed to condense as deposits of tine powder on the cooler regions of tire chamber after leaving the plasma. Colloidal spheres of alumimun, copper, aluminum nitride and silicon carbide are made in this way. 

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