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Phase shifter

Figure 11. 4-port devices power splitter, relative phase shifter, directional coupler. [Pg.267]

Fig. 36. Phased array system based on a polymeric photonic rf phase shifter... Fig. 36. Phased array system based on a polymeric photonic rf phase shifter...
Chip containing 4 photonic RF phase shifters fabricated fromCLD... [Pg.67]

Fig. 9.56 Phase shifters (a) non-reciprocal isolating arrangement (b) latching. Fig. 9.56 Phase shifters (a) non-reciprocal isolating arrangement (b) latching.
The way in which the ferrite parts are arranged in the guide is illustrated in Fig. 9.57. Because considerable power can be handled by radar phase shifters the... [Pg.540]

Fig. 9.57 Schematic diagram of a four-bit latching phase shifter the driver terminals pass current pulses along the central conductor to switch ferrite bits (cf. Fig. 9.56(b)). Fig. 9.57 Schematic diagram of a four-bit latching phase shifter the driver terminals pass current pulses along the central conductor to switch ferrite bits (cf. Fig. 9.56(b)).
Phase shifter (passive) A device that shifts the phase of the output signal by a specified (knob or voltage-selectable) number of degrees relative to its input. Phase shifters function over a specified frequency range, and excessive attenuation of the signal typically results outside this range. [Pg.357]

Fig. 12. The phase shifter/mixer unit. For each of the four rf channels the TTL logic box contains two monoflops that may activate a mixer-driver through a triple OR gate. The third input of each OR gate accepts gate pulses from the pulse programmer whose lengths are specified by software on a raster of 100 ns. The two monoflops are fired by needles from the pulse programmer and allow finely adjusted rf pulses of duration 0.3-1.5 and 0.5-3 /us, respectively, to be generated. Fig. 12. The phase shifter/mixer unit. For each of the four rf channels the TTL logic box contains two monoflops that may activate a mixer-driver through a triple OR gate. The third input of each OR gate accepts gate pulses from the pulse programmer whose lengths are specified by software on a raster of 100 ns. The two monoflops are fired by needles from the pulse programmer and allow finely adjusted rf pulses of duration 0.3-1.5 and 0.5-3 /us, respectively, to be generated.
Fig. 15. The pulse shaper. The gate is a DMF2A 5-1000 double-balanced mixer from Merrimac. R = 300 fl, R = 18 fl, and C = 270 pF. The bottom part shows how a properly delayed, shortened dc pulse is generated. The signal at TTL in is any of the +x, x, -t-y, or -y mixer-driver pulses generated in the phase shifter/mixer unit. TTL out is used to drive the switch in the preamplifier unit into its off state. Fig. 15. The pulse shaper. The gate is a DMF2A 5-1000 double-balanced mixer from Merrimac. R = 300 fl, R = 18 fl, and C = 270 pF. The bottom part shows how a properly delayed, shortened dc pulse is generated. The signal at TTL in is any of the +x, x, -t-y, or -y mixer-driver pulses generated in the phase shifter/mixer unit. TTL out is used to drive the switch in the preamplifier unit into its off state.
Improvements in time resolution in the stroboscopic method were achieved at the University of Tokyo by use of a twin linac system in which one aceelerator delivers the electron pulse to the sample and the other generates the Cerenkov light pulse used as the analyzing light [151]. Both linacs are driven by the same microwave source and delay between the electron pulse and the light pulse is achieved by phase shifters [151a]. The result is that the time interval between these two pulses is less than 3 ps. [Pg.624]

Applications that have received attention, and the material properties that enable them, are shown in Figure 27.1. These applications are reviewed in detail in Waser and Ramesh. Decoupling capacitors and filters on semiconductor chips, packages, and polymer substrates (e.g., embedded passives ) utilize planar or low aspect ratio oxide films. These films, with thicknesses of 0.1 to 1 J,m, are readily prepared by CSD. Because capacitance density is a key consideration, high-permittivity materials are of interest. These needs may be met by morpho-tropic phase boundary PZT materials, BST, and BTZ (BaTi03-BaZr03) solid solutions. Phase shifters (for phase array antennas) and tunable resonator and filter applications are also enabled by these materials because their effective permittivity exhibits a dependence on the direct current (DC) bias voltage, an effect called tunability. [Pg.530]


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See also in sourсe #XX -- [ Pg.55 ]

See also in sourсe #XX -- [ Pg.216 ]




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