Pentacene voltage-dependent mobility

Fig. 17 Temperature dependence of the hole mobility measured in an FET with (a) pentacene and (b) P3HT as active layers. Parameter Is the gate voltage. Data fitting using the Fishchuk et al. theory in [102] yields values for the mobility and the disorder potential extrapolated to zero electric field and zero carrier concentration. To is the Meyer-Nedel temperature (see text). From [102] with permission. Copyright (2010) by the American Institute of Physics...

Fig. 20.2 Operating characteristics of pentacene-based TFT. The channel length L is 100 xm and the channel width W is 3 mm. (a) Square root of the saturation current as a function of the gate voltage in a vacuum. The dashed line is a fit to obtain the hole mobility. Inset shows the drain current vs drain voltage characteristics measured in a vacuum, (b) Time dependence of the saturation current measured at a gate voltage of -100 V and a drain voltage of -100 V. The OTFT was exposed to wet N2 gas with different RH and vacuum, alternatively, (c) The saturation current measured at V =-100 V and V = -100 V as a function of relative humidity for two OTFTs. The circles are for the OTFT with a 50-nm-thick pentacene layer the triangles are for the OTFT with a 100-nm-thick pentacene layer (Reprinted with permission from Zhu et al. (2002). Copyright 2002 American Institute of Physics)...

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