Passive structured packing

Finally, the electrical performance of an OFET-structure made of vacuum deposited DCNDBQT, which form a closed packed and dense molecular layer, was tested. The output characteristics of the OFET clearly show the behaviour of a p-type semiconductor. The resulting field mobilities of 10 cmWs reflect a high current density as interpreted in the framework of the ultra-thin molecular QFET structure. The sensitivity of the ultra thin material towards the environment neeessitates that in the future, the OFET has to be produced and measured under vacuum-like conditions to the exclusion of air, which may be realised by appropriate passivation processes. 

X 10 torr seconds. Auger electron spectroscopy and 16) has shown that a layer which can be represented as Fe O OH protects iron from further attack. Direct evidence of hydrogen being present in the passive film formed in solution was provided by mass spectrometry (30). Electron diffraction (2, 29) has shown tHat the protective surface layers wHTch form on iron which has been air oxidized or passivated in solution are surprisingly similar. The structures are based on the cubic close packed oxygen lattice of y Fe O OH, or Fe304 ... 

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