P XRD patterns

The P-XRD patterns of the host structure in compounds A and B show a reduction of the reflections in comparison to the pristine MCM-48 silica material (figure 1). 

Figure 1. P-XRD pattern of products synthesized with different modifiers under otherwise comparable conditions (80°C, 10% dodecylphosphate, 5d, Ti modifier/l l)...

Figure 6. P-XRD pattern of product A Figure 7. P-XRD pattern of product B obtained at low hexadecylamine concentration obtained at high hexadecylamine (10%) concentration (40%)...

Figure 9. P-XRD pattern of nanostructured composites of chromium (III) oxide and dodecylphosphate synthesized with different surfactant concentrations...

Recendy, ID quantum dots of gallium selenide with average diameter 8-10 nm, connected in the form of chains of average length 50-60 nm, were synthesized on rro substrates by cathodic electrodeposition from acidic aqueous solutions of gallium(III) nitrate and selenious acid [186], The structural analysis from XRD patterns revealed the formation of Ga2Se3/GaSe composition. The films were found to be photoactive in aqueous sodium thiosulfate solution and showed p-type conductivity. 

Figure 3.19. XRD pattern of a thin film (thickness 1 pm) of the a-phase of p-NPNN HV-grown on a glass substrate. The inset shows the rocking curve of the (004) reflection. Reprinted with permission from J. Fraxedas, J. Caro, J. Santiso,...

Figure 5.15. XRD pattern of a 1 p.m thick TMTTF/NaCl(100) film grown by PVD. The (200) reflection from the substrate is intentionally only partially shown.

Only one group has reported CD of SbiSes. The solution used was potassium an-timonyl tartrate, complexed with triethanolamine and ammonia. Selenosulphate was used as the Se source. No XRD pattern was found, as for the sulphide deposited under equivalent conditions. The bandgap was 1.88 eV, and resistivity O-cm [13,14]. Continued study of this deposition showed the effect of various parameters on deposition rate and film thickness (the latter typically reaching 1 p.m) [15]. This study also described some photoelectrochemical behavior of these films (Chap. 9). 

CoSe was deposited using a similar composition to that for CoS, except that selenosulphate was used in place of thioacetamide, NaOH and hydrazine were also added to the solution, and the deposition was carried out close to 100°C [37]. In contrast to CoS, no XRD pattern was observed for the as-deposited films annealing at 280°C crystallized the films to give a defined pattern corresponding to CoSe. A direct bandgap of 0.45 eV was estimated from the optical spectrum. The films were p-type and the resistivity 10 O-cm. 

In the tables for both Cu-S and Cu-Se (Tables 6.4 and 6.5), the column denoting conductivity type has been deleted (these semiconductors are always p-type), and, in its place, the phase (and/or composition) has been given. In some cases, particularly for the sulphides, where no XRD pattern was seen (except for CuS), no phase (or composition) was proven and therefore no entry is given in the table. This was not a problem for Cu-Se, since XRD spectra were always clear and definitive. 

MnS was deposited from a room-temperature solution of Mn(II) acetate complexed with triethanolamine and buffered with NH4CI [73]. Thioacetamide was used as a sulphur source, and hydrazine was also used (it was not specified whether the reaction proceeded in its absence). No XRD pattern was seen in the as-deposited (grey-pink) film annealing at 500°C in an inert atmosphere gave a pattern corresponding to MnS. A bandgap (indirect) of 3.25 was measured from the optical spectrum. The film was p-type with a resistivity of ca. 10 O-cm. 

As indicated by XRD patterns, there exist just 2-3 broad peaks in the calcined acid-made materials (Fig. 3A). Moreover, the N2 adsorption/desorption isotherm shown in Fig. 3B, the calcined acid-made mesoporous silica indeed possesses a broad capillary condensation at the partial pressure p/p0 of ca. 0.2-0.4, indicating a broad pore size distribution with a FWHM ca. 1.0 nm calculated from the BJH method. This is attributed to the occurrence of partial collapse of the mesostructure during the high temperature calcination. The hexagonal structure completely collapsed when subjected to further hydrothermal treatment in water at 100 °C for 3 h. Mesoporous silica materials synthesized from the acid route are commonly believed to be less stable than those from the alkaline route [6,7]. 

The pure siliceous MCM-41 sample (reference) synthesized earlier by the same procedure [4, 5] showed the typical high surface area, well resolved [100], [110], [200] and [210] diffraction peaks in the XRD pattern and an N2 adsorption isotherm (IUPAC type IV) revealing a sharp inflection in the curve at ca. p/po=0.33 due to pore condensation typical for a narrow pore size distribution around a value of 28 A. The siliceous composite samples obtained, using combinations of the C6 and C 4 templates and different synthesis... 

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