P-SiC formation

The carbothermic reduction can also be carried out at lower (about 1500°C—1600°C) temperature resulting in P SiC formation (72). 

Carburization P-SiC formation (step 1) Diamond nucleation (step 2)... 

Kim et al.f studied the effect of gas pressure on the nucleation behavior of diamond on a Si(lOO) substrate in HFCVD. The pressure was varied from 2 to 50 torr, while a filament temperature of2200°C, a substrate temperature of 850°C, a total flow rate of 20 seem and a CH4 concentration of 0.8 vol.% were used. The characterization of diamond deposits using micro-Raman spectroscopy, SEM and OM revealed that the maximum nucleation density of diamond parades on the unscratched Si substrate occurred at a pressure of 5 torr. The pressure dependence of the nucleation density was explained by the competition effect between P-SiC formation, which increases the diamond nucleation density, and atomic-hydrogen etching, which decreases the nmnber of nucleation sites. On the basis of this finding, a new fabrication approach for high-quality diamond films without... 

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See also in sourсe #XX -- [ ]

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