Oxide semiconductor ideal contact

The first significant step towards understanding the mechanism of the electrode-oxide semiconductor is given in an ideal case contact. Another advance in our understanding of the electrode-oxide semiconductor junction is concerned with contacts with surface states, and interfacial layer and... 

Etch Mechanisms. Most wet etches for the compound semiconductors employ oxidation of the semiconductor followed by dissolution of the oxide. For this reason, many wet etches contain the oxidant hydrogen peroxide, although nitric acid can also be used. One advantage of wet etching over dry is the absence of subsurface damage that is common with dry etching. Metal contacts placed on wet-etched surfaces exhibit more ideal characteristics than dry-etched surfaces. 

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