OTFT Devices

All the circuits were designed using only a positive channel metal oxide semiconductor (PMOS) devices as in contrast to their silicon candidates OTFT exhibit high mobility 

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Practical polymers for OTFT devices require low levels of intrinsic or extrinsic carriers. In fact, most polymers discussed here in their clean state would be intrinsic semiconductors, with practically no free carriers in them. This is achieved by a reasonably large band gap and high material purity. Some examples are shown in Figure 7.14. 

Therefore, there are not many reports of vertically separated semiconduc-ting/insulating polymer blends. However, the achievements in the limited reports have displayed the versatility of possible applications of semiconducting/insulating polymer blends in OTFT devices. 

A major problem in the use of OTFTs is the instability of organic semiconductors to light, atmospheric oxygen, and humidity, or a combination of these stress factors, which limits the shelf life of these components. The exposure of OTFT devices to the environment typically results in devices with high off currents, large and unstable onset voltages, and large subthreshold slopes. Encapsulation of the devices can prevent the penetration of air and humidity and thus effectively enhances the environmental stability of OTFTs. 

The charge transport in P3AT nanowires synthesized via self-assembly has been studied by fabricating and testing OTFT devices constructed from a single nanowire, or a network of nanowires [79, 80]. A field-effect mobility of 0.02 cm s ... 

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