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Optical Transitions in ZnO

At lower energies from 3.34 to 3.31 eV, two-electron sateDite (TES) recombination lines of the neutral donor bound excitons are observed. In some samples, a donor-acceptor pair (DAP) transition at 3.22eV that is again followed by phonon replicas is found, even though the chemical identity of the acceptor is unknown. In this chapter, a review of all these transitions is given. In addition, the refractive index of ZnO and MgZnO and stimulated emission and carrier dynamics in ZnO are discussed. [Pg.155]

Optical Transitions in ZnO 171 Table 3.4 Binding energies and chemical identities of various donors. [Pg.171]

Bundesmann, C., Schmidt-Grund, R. and Schubert, M. (2008) Far-infrared to vacuum-ultra-violet optical properties of ZnO phonons, plasmons, dielectric constants, refractive indices, band-to-band transitions, and excitons, in... [Pg.236]

In situations where the performance is dependent on the uniqueness of the crystal structure of the material, such as the metal-Insulator transition in vanadium oxide, acousto-optic and acoustic-electric responses of AIN, ZnO, PZT, BaTiOg and SrTi03, superconducting properties of copper oxide based perovskites, A-15 silicides, and NbN, wide band gap and dopability of SiC, transistor action in Si/NiSi2(CoSi2)/Sl epitaxial layers etc., it is important to optimize the deposition conditions for the growth of a %[Pg.395]

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