One-Dimensional Model of Nonequilibrium Photodetector

According to the previous three sections we can write the model of a generalized nonequilibrium photodetector. Its form corresponds to that of the standard Van Roosbroeck-Shockley set of semiconductor equations [343], but with taking into account the influence of magnetic field. 

For electrons in a semiconductor sample the time-dependent one-dimensional continuity equation is 

Electron current density for the case when there is only electric field is 

The equations for hole current density and the corresponding continuity equation are obtained in the equivalent manner. 

It should be bom in mind that the drift and Hall carrier mobility, as well as the diffusion constant, are dependent on the concrete scattering mechanisms in a given semiconductor and thus in a general case on the intensity of the applied electric and magnetic fields. Since the electric field generally depends on the position within the sample, this means that the mobility and the diffusion constant are the fimctions of the spatial coordinate. 

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