Non-Cubic Semiconductors

HVPE GaN films are known from SIMS measurements to contain Si and O as dominant impurities, and a comparison with results obtained on Si-doped GaN [264] has led Moore et al. [171] to identify tentatively the 31.1 meV donor 

An ionization energy of 19.5 meV for an unknown donor in CdSe has been determined from two-electron PL transitions [100]. As donors should 

---