Noble Metal CMP for DRAM

Capacitor using Hf02 base dielectric film, applies TiN by top/bottom electrode. However, capacitor technology under 50 nm needs to develop new dielectric material and electrode material. So, noble metals, such as 

FIGURE 6.4 Electrochemical characterization of various oxidizers in Pourbaix diagram of Ru, obtained from Tafel plots and pH of the slurries. 

FIGURE 6.6 Comparison of leakage current of RIR capacitors node separated by Ru CMP and Ru dry etching. 

FIGURE 6.7 Positive and negative leakage current of RIR capacitor at IV and -IV. 

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