Next-Generation TFTs

If amorphous Si TFTs and OFETs are adequate only for lower performance, lower cost applications, what are the options for more advanced applications To achieve the higher performance that is desired while keeping process technology consistent with the goals of macroelectronics, several different fabrica- 

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The thickness of the active layer is about 100-300 nm, while the source-drain distance (channel length) amounts to a few micrometers. The channel length is determined by the current requirements and usually exceeds 10 /xm. Other manufacturing schemes as well as alternative stmctures are described elsewhere [619, 621]. Technology developments for the next generation TFTs that are to be used for high-resolution displays have been summarized by Katayama [627]. 

More recently a new generation of oxide semiconductors are being studied and applied as the active material to TFT, in special zinc oxide (ZnO). This will be described in the next sections. 

In this method, first used by Navarro et al. [230, 231] and by van Bokhoven [232, 233], the convolution recorded in the frequency domain is accepted as the transformation equation [Eq. (2.8)] of the calorimeter. For the determination of an unknown heat effect, it is assumed that the spectrum transmittance H(jheat effect Px(t) is generated and the calorimetric signal Tx(t) is measured. After determination of the spectrum transmittance H(jcalorimeter response Tft), the thermokinefics Px(t) is obtained as the inverse Fourier transform... 

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