Neutralization of Deep Levels in Silicon

In this chapter we will list the deep-level centers passivated by atomic hydrogen in the major elemental semiconductor, namely Si, and discuss their thermal stability and the possible passivation mechanisms. As is the case with any aspect of hydrogen in semiconductors, much more work has been performed in Si than any of the other materials. 

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S. J. Pearton, Neutralization of Deep Levels in Silicon J. I. Pankove, Neutralization of Shallow Acceptors in Silicon... 

In electrically neutral semiconductor samples, random internal electric fields can be present at low temperature because of the compensation and/or of the simultaneous presence of the electrically-charged deep centres. The following estimation of the effect of random internal electric fields on shallow impurity levels is taken from [123] who used it for a qualitative explanation of the broadening of some donor lines in NTD silicon [67], and from [64], who presented it in a more general form. 

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