Deep level centers

A deep center may act either as a trap or as a recombination center, depending on the impurity, temperature, and other doping conditions. Consider a minority 

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In this chapter we will list the deep-level centers passivated by atomic hydrogen in the major elemental semiconductor, namely Si, and discuss their thermal stability and the possible passivation mechanisms. As is the case with any aspect of hydrogen in semiconductors, much more work has been performed in Si than any of the other materials. 

IV. Hydrogen Interacting with Deep Level Centers and... 

III. Neutralization of Deep Level Centers and Extended Defects... 

As far as the passivation of deep level defects by hydrogen is concerned, their understanding is rather poor, partly because the microscopic structure of these deep level centers is largely unknown. The thermal stability of the passivation of these deep centers has the advantage of being usually compatible with the temperature used in the process of III-V devices. This point might already create an interest in the field of applications. 

Deep Level Centers and Site-Selection Spectroscopy... 

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