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Neel transition temperature, doped

In doped semiconductors I is due to direct overlap in transitional-metal oxides the overlap between the d-orbitals is frequentiy via the oxygen ions and is then often called a superexchange interaction. Figure 3.4 shows the kinds of wave function expected. As regards magnitudes, if B 1 eV, 17 10 eV and z=4, kBTN should be 0.01 eV so that 100K, which shows why low Neel temperatures are common. [Pg.89]

Raman investigations show another transition or cross-over at the Neel temperature (x = 6.22). Deconvolution of the apex-phonon width shows the coexistence of four phases in the nonstoichiometric range of 123. It is possible that physical phase separation starts at x = 6.22 with the formation of hole-doped islands in an AF matrix (sect. 3.3.2), the percolation to the superconducting phase taking place at x w 6.40. [Pg.174]


See other pages where Neel transition temperature, doped is mentioned: [Pg.102]    [Pg.423]    [Pg.359]    [Pg.230]    [Pg.292]    [Pg.332]    [Pg.17]    [Pg.100]    [Pg.189]   


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