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Native Defects and Shallow Dopants

For Si, there are three types of native defects the vacancy, the interstitial, and the interstitialcy. The vacancy, V, is an empty lattice site. Depending on the configuration of the unsatisfied bonds due to the missing atom, a vacancy in Si can be either neutral, negatively or positively charged. A vacancy is also referred to as a Schottky defect. A Si atom residing in the interstices of the Si lattice is defined as a self-interstitial. A Frenkel pair is a vacancy-interstitial pair formed when an atom is displaced from a lattice site to an interstitial site. An interstitialcy [Pg.114]

Point vacancies, interstitials, impurity atoms, antisite defects  [Pg.114]

Planar stacking faults, twins, and grain boundaries  [Pg.114]


See other pages where Native Defects and Shallow Dopants is mentioned: [Pg.114]    [Pg.114]   


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Native defect

Shallow dopant

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