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Nanowires equation

The diffusive transport phenomena in nanowires can be described by a semiclassical model based on the Boltzmann transport equation. For carriers in a one-dimensional subband, important transport coefficients, such as the electrical conductivity, a, the Seebeck coefficient, S, and the thermal conductivity, Ke, are derived as (Sun et al., 1999b Ashcroft and Mermin, 1976a)... [Pg.192]

Pressure injection bismuth nanowires, 175-177 experimental setup, 174 nanowire fabrication, 173-177 template requirements, 175 Washburn equation, 174-175 Pressure swing adsorption, adsorption, 80 Protein microtube-mediated synthesis, nanostructured materials, 15-16 Purification, olefin-diene, 117... [Pg.213]

Figure 6. Variation of tensile strength as function of nanowire volume fraction. The solid line represents the least-square fit to the equation given in the figure. Figure 6. Variation of tensile strength as function of nanowire volume fraction. The solid line represents the least-square fit to the equation given in the figure.
D.S. Kosov, Kohn-Sham equations for nanowires with direct current, J. Chem. Phys. 119... [Pg.313]

Fig. 2 Magnetic field intensity (IHyr) of a nanowire LSPR structure at VF = 10% and yl = 50 nm (VF volume factor equivalent to a fill factor) (a) by the EMT based on a four-layer Fresnel s equation given in (1) and (2) and (b) near-field distribution calculated by FDTD (c) field profiles by EMT (across a cross-section represented by a ) and EDTD (b through a nanowire and c between nanowires). (d) SPR characteristics of a nanowire LSPR structure with df = 40 nm and dg = 20 nm, calculated by rigorous coupled wave analysis (solid) and EMT (dotted) when VE = 50%. Reprinted from [12], Copyright (2007), with permission from the Optical Society of America... Fig. 2 Magnetic field intensity (IHyr) of a nanowire LSPR structure at VF = 10% and yl = 50 nm (VF volume factor equivalent to a fill factor) (a) by the EMT based on a four-layer Fresnel s equation given in (1) and (2) and (b) near-field distribution calculated by FDTD (c) field profiles by EMT (across a cross-section represented by a ) and EDTD (b through a nanowire and c between nanowires). (d) SPR characteristics of a nanowire LSPR structure with df = 40 nm and dg = 20 nm, calculated by rigorous coupled wave analysis (solid) and EMT (dotted) when VE = 50%. Reprinted from [12], Copyright (2007), with permission from the Optical Society of America...
Our group previously reported that radiation induced crosslinking reactions in polysilane derivatives are mainly promoted by side-chain dissociated silyl radicals, and that the predominant reaction is determined by the radical concentration in the ion tracks [14,20,21]. Thus, the distribution of crosslinks in an ion track is expected to obey the equations (2) and (3) given in the previous section, and the crosslinking reaction also gives cylindrical poly(methylphenylsilane) (PMPS)-based nanowires with fairly controlled sizes as shown in Fig. 2. Using the reported value of G(x) = 0.12 derived from... [Pg.226]

Recent studies on the use of NS-Ti02 (anatase) as anode with LiCo02 cathode in a lithium battery demonstrated specific capacity of 169 mAh g" The Li insertion was limited to a maximum x value of 0.5 in equation 16 [317]. This can he compared with Lio,9iTi02(B) corresponding to a capacity of 305 mAh g" at a potential of 1.6V versus Li" (1 M)/Li for Ti02(B) nanowires (20 0 nm diameter) [318]. [Pg.57]

In subsequent discussion we will consider long enough nanorods with h R (nanowires). Variation of free energies Gy and Gs leads to Euler-Lagrange equation for Pj(p) with boundary conditions ... [Pg.109]

The calculation for nanowires has been performed similarly to that for nanopills. In this case, however, the polarization lies along wire axis. This makes a problem to be a little bit simpler as we can neglect small depolarization field Ed (R/hf [91] for the case h R typical for nanowires. In particular, Euler-Lagrange equation for Piip) along with the boundary condition can be written as... [Pg.234]

Figure 17.7 Electron density throughout the cross-section of a 2 nm-diameter silicon nanowire, determined by coupled numerical solution oftheSchrddingerand Poisson equations. After Ref [27]. Figure 17.7 Electron density throughout the cross-section of a 2 nm-diameter silicon nanowire, determined by coupled numerical solution oftheSchrddingerand Poisson equations. After Ref [27].
Figure 16.1.10 Nanowire diameter vs. (deposition time) for the growth of nanowires composed of four metals as indicated. Each series of experiments for a particular metal were performed using a single graphite crystal in order to limit the variation in the step edge density from experiment to experiment (see equation (16.1.1)). This crystal was cleaved before each experiment to expose a fresh, clean graphite surface. Error bars for each data point are twice the standard deviation for the mean particle diameter as measured from SEM images. Reprinted with permission of the American Chemical Society. Figure 16.1.10 Nanowire diameter vs. (deposition time) for the growth of nanowires composed of four metals as indicated. Each series of experiments for a particular metal were performed using a single graphite crystal in order to limit the variation in the step edge density from experiment to experiment (see equation (16.1.1)). This crystal was cleaved before each experiment to expose a fresh, clean graphite surface. Error bars for each data point are twice the standard deviation for the mean particle diameter as measured from SEM images. Reprinted with permission of the American Chemical Society.
Fig. 9. Experimental melting points of In nanowires in PAA and estimated dependence of melting temperature using the equation (15). Fig. 9. Experimental melting points of In nanowires in PAA and estimated dependence of melting temperature using the equation (15).

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