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Multilevel resists advantages

X-ray lithography also takes advantage of the increased resist sensitivity due to the thinner imaging films of multilayer systems. Thinner imaging films further improve X-ray resolution by minimizing the penumbra effect, a problem associated with an uncollimated X-ray beam. Consequently, the oblique exposure of features near pattern edges are minimized by multilevel resist processes, thereby restoring the desired profile. [Pg.372]

Photosensitizers can also be used to great advantage in multilevel photoresists. A typical system incorporates a long wavelength uv or visible light photosensitized resist on the top level and a deep uv sensitive resist on the bottom. Both resists may be based on cationic photoinitiators or one may be of this type while the other may be a conventional resist material. [Pg.5]


See other pages where Multilevel resists advantages is mentioned: [Pg.372]    [Pg.104]    [Pg.232]    [Pg.4325]    [Pg.376]    [Pg.20]    [Pg.98]    [Pg.111]    [Pg.19]    [Pg.5]    [Pg.353]    [Pg.353]   
See also in sourсe #XX -- [ Pg.364 ]




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Multilevel

Multilevel resists

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