Mobilities in High-Purity Films Temperature, Electric-Field, and Time Dependence

Mobilities in High-Purity Films Temperature, Electric-Field, and Time Dependence 

One of the many impressive and typical examples of the experimental results for the temperature dependence of the mobility in high-purity films containing only 

Its thickness was 8.7 pan. The temperature dependence of the hole mobihty obeys Eq. (8.82) almost perfectly over a range of about four orders of magnitude in the mobihty lg(p./po) oc -T. (One can readily convince oneself that distinguishing between J(T) oc -T and/(T) a T in the temperature range studied requires a high precision in the measurement of the temperature and the electric current) 

From the slope at the lowest electric fields, one obtains a value for the width of the DOS a = 0.098 eV. From the field dependence, whose origin wiU be treated later in this section, one obtains in addition the width of the non-diagonal disorder  

In van der Waals-bonded organic sohds, the overlap parameter is of the order of 2y a = 10 (y 0.5 A, a 10 A). This means that the relative width of the distribution of this parameter, E/2ya, is about 20%. 

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