Miscellaneous oxygen-containing radicals

Arrhenius parameters for reactions of the type RCO + HNF2 RCHO + NF2 

The rate of abstraction of H atoms from n-butane by lerl.-butoxy radicals was studied relative to the radical decomposition reaction 

In a recent review of silicon radical chemistry, Davidson [375] has pointed out the difficulties of measuring rate coefficients for abstraction reactions by silyl radicals. Convenient radical sources for gas phase studies are scarce, the H-abstraction reactions tend to be rather slow since Si—H bonds are quite weak and the analysis of radical dimers presents formidable analytical problems. The results shown in Table 35 for H-abstraction 

Since Si—halogen bonds are considerably stronger than Si-H bonds, the converse to the carbon analogues, the halogen transfer reactions of silyl radicals are fast. This is illustrated by the reactions between alkyl halides and trichlorosilane initiated by irradiation from a medium-pressure mercury arc [376—378] 

The chain lengths are long and the rate of formation of the alkane RH is governed by the rate of attack of SiCl3 on the alkyl halide. Competitive experiments have been carried out in which the relative rates of formation 

---