Microstructure of the Poly-Si Films

Si films with increase in lamp irradiance, showing that the crystallization of the a-Si films by FLA takes place laterally from the edges towards the center. To start the crystallization, the temperature of a-Si has to reach a threshold value, such as the melting point of a-Si in the case of melting growth, or the temperature required for a sufficient nucleation rate in the case of SPC. Thus, 

Although the surface Si seems to be melted during FLA, crystallization after complete melting of the whole Si is unlikely in this case. This is because the dopant profiles for boron (B) and phosphorus (P) show no significant 

The author acknowledges Prof. Matsumura and the members of the laboratory in JAIST for their support to part of the study introduced here, and Prof. Usami of Tohoku University for giving me an opportunity to write this chapter. 

Carnel, I. Gordon, D. Van Gestel, G. Beaucarne, J. Poortmans, in Proceedings of the 22nd EU PVSEC, Milan, 2007, p. 1880 

Kuenle, S. Lindekugel, E.J. Mitchell, S. Reber, in Proceedings of the 33rd IEEE PVSC, San Diego, 2008, p. 168 

---