Microstructurally inhomogeneous analysis

Materials Analysis. The next level of complexity involves the measurement of dielectric properties for the determination of composition and microstructure as well as thicknesses. Thin films are typically microscopically inhomogeneous with substantial fractions of grain boundaries and voids, so their dielectric properties are rarely equal to those of the corresponding materials in bulk form. As an example, the pseudodielactric function <(> film deposited by low pressure... [Pg.200]

Rapid advances in semiconductor techrwlogy, including thin film formation by deposition, interface preparation or microstructuring, demand characterization techniques that provide understanding of the fundamental processes involved, including information on structural order—disorder and spatial inhomogeneity. Raman spectroscopy is used both in process control and quality assessment [34]. Typical examples of semiconductor applications are composition determination, analysis of crystal structure, surface and interface analysis, phase determination, doping, point defects, temperature influence and mechanical stress. [Pg.121]