Residues metal, effective electronegativity

The values of the SiH stretching frequencies in compounds of the type MLm(SiH R3 ) compared with SiH R4 show a weakening of die Si-H bond, which is consistent with very low effective electronegativity values of the transition-metal residue MLm. Smith209) suggests that the electronegativity or inductive power of each substituent R in a silane HSiR1R2R3 can be expressed in E values derived from >(SiH), so that ... 

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