Metal films overgrowths

Growth experiments were carried out in two ultra high vacuum (UHV) cambers with sublimation sources of Si, Fe and Cr and quartz sensors of film thickness. Optical properties of the samples were studied in UHV chamber VARIAN (210 10Torr) equipped with differential reflectance spectroscopy (DRS) facilities. The samples surface was studied in the second UHV chamber (1 -10 9 Torr) equipped with LEED optics. Si(100) and Si(l 11) wafers were used as substrates for different series of the growth experiments. For the growth of silicide islands, metal films of 0.01-1.0 nm were deposited onto silicon surface. Silicon overgrowth with the deposition rate of 3-4 nm/min was carried out by molecular beam epitaxy (MBE) at 600-800 °C for different substrates. The samples were then analyzed in situ by LEED and ex situ by HRTEM and by... 

Ashida, M. (1966) The orientation overgrowth of metal-phthalocyanines on the surface of single crystals. I. vacuum condensed films on muscovite. Bulletin of the Chemical Society of Japan, 39,... 

In contrast to SPS, electrodes derivatized with molecules containing alternative end groups resulted in increased inhibition. In the case of — CH3-terminated molecules, the increased inhibition is sustained for hundreds of seconds, while electrodes modified with —OH or —COOH terminal groups are quickly deactivated, presumably by mushroom-like overgrowth of the metal at defects in the monolayer film that leave the molecule buried at the substrate-electrodeposit interface (e.g. Figure 2.5). 

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