Mercury telluride properties

Neumann-SpaUart M, Tamizhmani G, Boutry-ForveiUe A, Levy-Clement C (1989) Physical properties of electrochemicaUy deposited cadmium mercury telluride films. Thin Solid Eilms 169 315-322... 

Neumann-Spallart M., Tamizhami G. and Levy-C16ment C. (1990), Photoelectro-chemical properties of semiconducting cadmium mercury telluride thin films with bandgap between 1.47 and 1.08 eV , J. Electrochem. Soc. 137, 3434-3437. 

A lead sulfide photoconductor is the most widely used transducer for the near-1R region of the spectrum from 10,000 to 333 cm(I to 3 pm). It can be operated at room temperature. For mid- and far-lR radiation, MCT photoconductor transducers are used. They must be cooled with liquid nitrogen (77 K) to minimize thermal noise. The long-wavelength cutoff, and many of the other properties of these transducers, depend on the ratio of the mercury telluride to cadmium telluride. which can be varied continuously. 

J. Brice and P. Capper, eds., Properties of Mercury Cadmium Telluride, Institution of Electrical Engineers (INSPEC), London, 1987. 

The next step is to provide electrical connections 3 between the electrode leads 13 and the contact pads 23. Because the active regions are present adjacent the passivated lower surface during the heat treatments, for example when the adhesive layer 4 is cured, they do not suffer significantly from degradation of the material properties of the mercury cadmium telluride... 

J John Brice and Peter Capper, "Properties of Mercury Cadmium Telluride , 1NSPEC (The Institution of Electrical Engineers), 1987. 

Phases formed on semiconductor surfaces can change the electrical properties in an uncontrolled, deleterious fashion. Oxide passivation layers on compound semiconductors (e.g., mercury cadmium telluride IR detectors or gallium arsenide solar cells) can be grown to impart protection to the surfaces and to stabilize electrical properties by preventing uncontrolled reactions. 

Capper and Garland 2011) Mercury Cadmium Telluride Growth, Properties and Applications by P. Capper and J. Garland, eds., John Wiley Sons., Cites an expression for Eg x, T) by Hansen et al. [4]. 

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