Magneto-Raman

The magneto-Raman measurements of [35] were performed up to 9.16 T at LHeT for the three main orientations of B on a sample giving a relatively broad Raman line12 (FWHM of0.45meV ( 3.6 cm-1)). They were interpreted by considering only the Zeeman splitting of the lTg+ state and the values of g[ and g 2 so obtained were 0.84 0.09 and 0.13 0.08, respectively. 

T Ruf, C Trallero-Giner, RT Phillips, M Cardona. Resonant magneto-Raman scattering in GaAs. Phys Rev B 41 3039-3047, 1990. 

Electronic structures of GICs, thus theoretically characterized, are investigated experimentally by means of various techniques, such as x-ray photoemission spectra, ultraviolet photoelectron spectra, electron energy loss spectra, magneto-oscillation, optical reflectance, Raman spectra, Pauli paramagnetic susceptibility, electronic specific heat coefficient, NMR, positron annihilation, etc. Comparisons between theoretical treatments and experimental characterizations will be discussed in the Sections 6.3.2 and 6.3.3 of this chapter for actual GICs. 

Note The estimations are carried out using optical reflectance (< ), magneto-oscillation (m), spin susceptibility (s), and Raman scattering (r). 

Pr + ( H4), and Sm + ( H5/2) ions. These studies have revealed both pure crystal-field excitations in R2CUO4 systems, as well as crystal-field excitations in RBa2Cuj06 systems that derive their Raman intensities from a strong magneto-elastic coupling with phonons. For a more detailed discussion of these studies, the reader is referred to the recent review article by Cardona (1999). 

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