Magnetic ions, doped semiconductor

Magnetic Ions Dope Wide Band-Gap Semiconductor Nanocrystals Realizing Decoupled Optimization of Thermoelectric Properties... 

In order to solve the problems of the low solubility of magnetic ions in III-V semiconductors and the difficulty of the carrier control in II-VI semiconductors, modulation-doped III-V/II-VI superlattice structures have been proposed (Kamatani and Akai 2001a). Here, a... 

It is well known that the ZT value of thermoelectric materials depends on three strong interrelated parameters, i.e., the electrical conductivity (a), the Seebeck coefiicient (5), and the thermal conductivity (k) while either independent optimization or balance of these parameters is a great challenge. In this study, we put forward a new concept of doping wide band-gap semiconductors with magnetic ions to decouple the interrelated parameters. The temperature dependence of thermoelectric properties for pure and Ni-doped Cu2ZnSnS4 nanocrystals are measured and shown in Fig. 5.5. 

A magnetic semiconductor thin him is made by doping ZnO with the 3d3 7 ion Co2+. The crystal hied splitting of the d orbitals in a tetrahedral site is opposite to that in an octahedral site, with the lower pair of levels labeled e and three upper orbitals labeled t2- (a) What is the spin state of the Co2+ ion in ZnO (b) What is the expected magnetic moment on the Co2+ ions (c) The spectrum has an absorption peak at 660 nm. What is the crystal held splitting of the Co2+ ion in the tetrahedral crystal held of ZnO ... 

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