Luttinger VB parameters

New VB parameters 71, 72, and 73 were introduced by Luttinger [60] in his description of holes in the silicon VB. These so-called Luttinger VB parameters, which have been adopted for other semiconductors, are different from the ones in (3.25) as holes were considered instead of electrons ... 

The electron effective masses mn at the CB minimum at k = 0 are generally smaller than the ones for k /Z 0 CB minima, as can be judged from Table 3.6. The Luttinger VB parameters have been determined by many authors, though biased in some cases by the values used in the most recent calculations of the shallow-acceptor levels. The situation is complicated by the fact that for semiconductors like InSb, where there is an interaction between the valence and the conduction bands, effective Luttinger VB parameters 7j have been defined by [82] as ... 

Table 3.6. Experimentally-determined effective masses (in units of me) at k = 0 extrema and VB Luttinger parameters for some direct-band-gap cubic semiconductors...

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