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Long-range stress fields

Heterophase Interfaces. In certain cases, sharp heterophase interfaces are able to move in military fashion by the glissile motion of line defects possessing dislocation character. Interfaces of this type occur in martensitic displacive transformations, which are described in Chapter 24. The interface between the parent phase and the newly formed martensitic phase is a semicoherent interface that has no long-range stress field. The array of interfacial dislocations can move in glissile fashion and shuffle atoms across the interface. This advancing interface will transform... [Pg.307]

The long-range stress field about a dislocation loop also cancels and thus the strain energy of a curved dislocation is approximately Gb /4n) ln(p/ro), where p is the radius of curvature. " ... [Pg.298]

Fig. 8.9. Stress fields at the end of a trench etched in a 15f Fig. 8.9. Stress fields at the end of a trench etched in a 15f<m thick layer of sputtered alumina on a glass substrate. The trench was 15frm deep, 0.4 mm wide, and 10 mm long. The long-range residual stress in the alumina layer measured from the curvature of the glass substrate was —40 MPa (compressive). The top two collages are photographs of one end of the trench with measurements by acoustic microscopy of (a) the sum of the stresses axx + ayy and (b) the difference of the stresses ayy — axx f = 670 MHz. The bottom two pictures are finite-element calculations of the same geometries, with the points AB corresponding to those in the upper pictures and the colour scales corresponding in each case to the picture above, of (c) the sum of the stresses axx + ayy and (d) the difference of the stresses ayy — axx (Meeks et al. 1989).
It is often useful to describe the dislocation content of coherent and semicoherent interfaces in terms of another framework which employs coherency dislocations and anticoherency dislocations. The basic idea is illustrated in Fig. B.8, which shows the same two boundaries shown previously in Fig. B.76 and c. The coherency dislocations possess a stress field equivalent to the long-range coherency stresses associated with the coherent interface. They are not real dislocations in the... [Pg.598]


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