Location of Hydrogen in Semiconductors by Ion Channeling

Over 97% of the ions in a beam can be channeled in a crystal. This figure can be achieved for a well-collimated beam of MeV light ions, for which dmin is of order 0.1 A, directed along a low-index direction onto a single crystal sample. Typically, the sample is mounted on a goniometer which allows different low-index directions to be brought parallel to the beam during an experiment. The 2 or 3% of nonchanneled ions are those that hit the ends of the atomic rows at the surface or are scattered from surface disorder. 

Limitations of lattice location relate to the depths that can be probed, the solute concentrations that can be used, and the accuracy to which the 

The essence of Monte-Carlo models is to calculate the path of an ion as it penetrates a crystal. Early versions of these models used the binary collision approximation, i.e., they only treated collisions with one atom at a time. Careful estimates have shown that this is an accurate procedure for collisions with a single row of atoms (Andersen and Feldman, 1970). However, when the rows are assembled into a crystal the combined potentials of many neighboring atomic rows affect ion trajectories near the center of a channel. For this reason, the more sophisticated models used currently (Barrett, 1971, 1990 Smulders and Boerma, 1987) handle collisions with far-away atoms using the continuum string approximation, 

Applications of Lattice Location a. The Site Occupied by Implanted Hydrogen 

Extensive channeling measurements on 2H implanted into silicon have been published by Bech Nielsen (1988). These measurements also use the 3He-induced nuclear reaction in conjunction with extensive modeling using the statistical equilibrium model already described. The 2H implants were done at 30 K, and lattice location of the 2H was done as a function of annealing. 

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