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Local metal deposition defect induced

FIGURE 36.1 Schematic illustration of some electrochemical techniques employed for surface nanostructuring (a) tip-induced local metal deposition (b) defect nanostructuring (c) localized electrochemical nucleation and growth d) electronic contact nanostructuring. [Pg.681]

Electron polarization frequently happens at sites surrounding atoms with even lower atomic CNs than that of a flat surface, namely four. As a consequence of the local polarization and entrapment, transition from conductor to semiconductor happens to small clusters such as 3-nm-sized A1 nanoislands deposited on Si substrate [1]. The broken-bond-induced densification and localization of electrons with lowered binding energy in the traps have been observed as defect states [2], chain end states [3, 4], terrace edge states [5-7], and surface states [8-10]. Strong localization of excess electrons also happens to the surface of ice [11] and metal films [12]. [Pg.239]


See other pages where Local metal deposition defect induced is mentioned: [Pg.680]    [Pg.301]    [Pg.305]    [Pg.588]    [Pg.217]    [Pg.237]    [Pg.522]    [Pg.162]    [Pg.12]    [Pg.116]    [Pg.297]   
See also in sourсe #XX -- [ Pg.301 ]




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