Kinetics and Growth Regimes

The growth in vapor phase can be decomposed into several stages  

The theoretical framework of the growth kinetics takes into account the physics of species distribution within the gas phase. The key parameters are, therefore, the flow of reactive species from the gas phase to the surface of the substrate and the flow caused by the consumption of these species during growth. 

Fg represents the flow of silicon atoms from the gas phase to the substrate and Fs represents the flow of silicon atoms consumed by chemical reactions during the crystal growth. 

At equilibrium, these flows are equal, then it comes  

The growth rate can be written, according to N, as the number of silicon atoms per unit volume in the crystal that is equal to 5 x 1022 cm-3 and v = This leads to  

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