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Growth regimes

Fig. 3. Curve ihustrating the activation energy (barrier) to nucleate a crystalline phase. The critical number of atoms needed to surmount the activation barrier of energy AG is n and takes time equal to the iacubation time. One atom beyond n and the crystahite is ia the growth regime. Fig. 3. Curve ihustrating the activation energy (barrier) to nucleate a crystalline phase. The critical number of atoms needed to surmount the activation barrier of energy AG is n and takes time equal to the iacubation time. One atom beyond n and the crystahite is ia the growth regime.
Figure 4a. Typical size distribution of 21 Po, full line BOM results (both screen sets), dashed line EML results, for no growth regime. CN levels below 70 per cm , no SO2 added, humidity 2-5% or 75-90% made no difference. The difference in width is probably due to better resolution for series than for parallel method. Error bars are standard deviations for the measurements. Figure 4a. Typical size distribution of 21 Po, full line BOM results (both screen sets), dashed line EML results, for no growth regime. CN levels below 70 per cm , no SO2 added, humidity 2-5% or 75-90% made no difference. The difference in width is probably due to better resolution for series than for parallel method. Error bars are standard deviations for the measurements.
Figure 4b. Typical size distribution of 218Po, full line BOM, dashed line EML, for growth regime. CN level was in general around 4 X 105 per cm , humidity 3-5%, SO2 introduced concentration 10-20 ppm. The presence of a peak at size. 075y to. lly is not fully understood and may be an artifact of the deconvolution program. Error bars are standard deviations for the measurements. Figure 4b. Typical size distribution of 218Po, full line BOM, dashed line EML, for growth regime. CN level was in general around 4 X 105 per cm , humidity 3-5%, SO2 introduced concentration 10-20 ppm. The presence of a peak at size. 075y to. lly is not fully understood and may be an artifact of the deconvolution program. Error bars are standard deviations for the measurements.
The two atmospheres we decided to use to test our methods were growth and no-growth regimes. The first one was accomplished by introducing SO2 at 10-20 ppm levels, the second by using outside air where SO2 on N0X concentrations rarely exceed few ppb levels. The detailed discussion of these results will be given elsewhere in these proceedings. [Pg.354]

The distribution of the activities for the growth regime is more favorable for the second set (all activities not much different from each other) and it is this set that gives a peak at larger sizes. The EML set gives better data for the no-growth regime. [Pg.355]

Table III. Stationary values of G and for a DTB crystallizer operated with a fines r oval system and a size dependent growth regime. The values are given before and 35000 second after a step in the heat input of the crystallizer from 120 to 170 kW. The simulation has been performed with kOO gridpoints... Table III. Stationary values of G and for a DTB crystallizer operated with a fines r oval system and a size dependent growth regime. The values are given before and 35000 second after a step in the heat input of the crystallizer from 120 to 170 kW. The simulation has been performed with kOO gridpoints...
The two growth regimes are associated with correspondingly distinct rates of latent heat evolution and, at some critical heat extraction rate, an interesting oscillation between the two growth types is predicted to occur. At sufficiently higfr... [Pg.474]

The parameter y (given in Equation 4-64) is zero at time zero and increases with time. In different nucleation and growth regimes, the rate of increase is different. Hence, it is assumed that y is proportional to time raised to some power n, leading to... [Pg.365]

This solution describes the linear growth regime, and BlA is the linear rate constant where... [Pg.319]

Many studies [40-43] have been performed on the fracture behaviour of PMMA as a function of temperature or cross-head speed. As an illustration, Fig. 30 shows the critical stress intensity factor, K c, in a log-log plot as a function of temperature for various crack speeds [40]. The temperature range is limited to + 80 °C in order to avoid ductile tearing. In the stable crack growth regime of interest here, whatever the crack speed, K c decreases with increasing temperature. [Pg.258]

O Neill, M. L. Yates, M. Z. Johnston, K. P. Smith, C. D. Wilkinson, S. P. Dispersion Polymerization in Supercritical C02 with a Siloxane-Based Macromonomer The Particle Growth Regime. Macromolecules 1998a, 31, 2838-2847. [Pg.162]

S.M. Iveson, J.D. Litster, Growth regime map for liquid-bound granules, AIChE J. 44 (1998) 1510-1518. [Pg.244]

S.M. Iveson, P.A.L. Wauters, S. Forrest, J.D. Litster, G.M.H. Meesters, B. Scarlett, Growth regime map for liquid-bound granules further development and experimental validation, Powder Technol. 117 (2001) 83-97. [Pg.244]

Laugel N, Betscha C, Winterhalter M et al (2006) Relationship between the growth regime of polyelectrolyte multilayers and the polyanion/polycation complexation enthalpy. J Phys ChemB 110 19443-19449... [Pg.155]

Forrest stressed as early as 1998 that two different types of growth regimes should be realized in this unique deposition process by variation of unique OVPD deposition parameters, for example substrate temperature, chamber pressure, and... [Pg.213]

Growth regime of the ApBq layer with regard to component B theoretical definition... [Pg.17]

Fig. 1.7. Schematic diagram explaining the theoretical definition (a) of the concept of the growth regime of the ApBq layer and the practical one (b). Fig. 1.7. Schematic diagram explaining the theoretical definition (a) of the concept of the growth regime of the ApBq layer and the practical one (b).
Therefore, instead of the definite point, x[f2, of change of the growth regime of the ApBq layer, there occurs a transition region of uncertain width. In Fig. 1.7b, this region was designated by the question mark to underline its ambiguousness. [Pg.18]

Critical thickness and growth regime of the A pBq layer with regard to component A... [Pg.22]

Like the case of component B, it is possible to theoretically define the concept of the regime of growth of the ApBq layer with regard to component A as well. The growth regime of the ApBq layer is reaction controlled with regard to component A at... [Pg.23]


See other pages where Growth regimes is mentioned: [Pg.930]    [Pg.240]    [Pg.274]    [Pg.275]    [Pg.164]    [Pg.81]    [Pg.81]    [Pg.493]    [Pg.239]    [Pg.71]    [Pg.502]    [Pg.697]    [Pg.318]    [Pg.321]    [Pg.320]    [Pg.150]    [Pg.194]    [Pg.27]    [Pg.136]    [Pg.119]    [Pg.70]    [Pg.71]    [Pg.84]    [Pg.17]    [Pg.17]    [Pg.23]    [Pg.24]    [Pg.24]   


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Crystal Growth Regimes

Growth rate kinetic regime

Growth rate mass-transfer-limited regime

Growth regime diffusion controlled

Growth regime of the ApBq layer with regard to component B theoretical definition

Growth regime reaction controlled

Kinetics and Growth Regimes

Regimes of growth

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