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Isotypic exclusion

Wabl, M. Steinberg, C. (1982). A theory of allelic and isotypic exclusion for immunoglobulin genes. Proc. Natl. Acad. Sci. USA 79,6976-6978. [Pg.93]

Structures of compounds with N =, containing cyclic H-bonded dimers, are rare. It has been derived from powder diffraction data on the basis of S-O and O--O distances that 3-NaHS04 contains exclusively such dimers [25]. Recently, this conclusion was confirmed by synthesis and structure determination of NaHSe04 by X-ray single-crystal diffraction [48]. Both compounds are isotypic and charac-... [Pg.93]

Figure 6 Purification of IgM by size exciusion chromatography foliowing euglobulin precipitation. Monoclonal antibody of IgM isotype (MAB 46.3) was purified from ascites by euglobulin precipitation. Precipitated IgM was contaminated by lgG3 and albumin, which were separated further by size exclusion chromatography on a Superose-6 column. Figure 6 Purification of IgM by size exciusion chromatography foliowing euglobulin precipitation. Monoclonal antibody of IgM isotype (MAB 46.3) was purified from ascites by euglobulin precipitation. Precipitated IgM was contaminated by lgG3 and albumin, which were separated further by size exclusion chromatography on a Superose-6 column.
Exclusion of minority carriers is a nonequilibrium transport effect occurring as a consequence of the application of electric field to an isotype contact, i.e., to a junction between semiconductors of the same type, but with different dopant concentrations and/or bandgaps. In n-type semiconductors exclusion is provided by... [Pg.156]

Current-voltage characteristics of mercury cadmium telluride exclusion devices are shown in Figs. 3.16, 3.17, 3.18. All of the presented curves are obtained for reverse bias of the isotype junction, but only the absolute values of current and voltage are shown in the diagrams. This is a convention used throughout this work. [Pg.168]

Figures 3.30 and 3.31 show the concentration profiles in a three-layer HgCdTe extraction-exclusion p jin photodiode at a temperature of 250 K for various values of bias voltage. The active region width was 2.7 pm, the p" layer was 0.65 pm wide, the n" layer 0.5 pm. Material composition throughout the whole diode was Xcd = 0.187. Donor concentration in the n" region was lO cm, and the concentration of acceptors in the p layer had the same value. The p-dopant concentration in the active region was 10 " cm . Both the isotype and the p-n junction were assumed to be abrupt. Figures 3.30 and 3.31 show the concentration profiles in a three-layer HgCdTe extraction-exclusion p jin photodiode at a temperature of 250 K for various values of bias voltage. The active region width was 2.7 pm, the p" layer was 0.65 pm wide, the n" layer 0.5 pm. Material composition throughout the whole diode was Xcd = 0.187. Donor concentration in the n" region was lO cm, and the concentration of acceptors in the p layer had the same value. The p-dopant concentration in the active region was 10 " cm . Both the isotype and the p-n junction were assumed to be abrupt.
The nonequiUbrium depletion and the increase of dynamic resistance in magnetoconcentration detectors is lower than in the case of heterostructure extraction photodiodes, but significantly better than in exclusion-based isotype devices under similar working conditions (lower dark currents and higher operating temperatures). [Pg.221]


See other pages where Isotypic exclusion is mentioned: [Pg.836]    [Pg.837]    [Pg.8]    [Pg.20]    [Pg.34]    [Pg.34]    [Pg.35]    [Pg.35]    [Pg.38]    [Pg.302]    [Pg.836]    [Pg.837]    [Pg.8]    [Pg.20]    [Pg.34]    [Pg.34]    [Pg.35]    [Pg.35]    [Pg.38]    [Pg.302]    [Pg.57]    [Pg.59]    [Pg.136]    [Pg.36]    [Pg.264]    [Pg.24]    [Pg.718]    [Pg.718]    [Pg.410]    [Pg.74]    [Pg.141]    [Pg.265]    [Pg.292]    [Pg.81]    [Pg.89]    [Pg.94]    [Pg.114]    [Pg.2184]    [Pg.157]    [Pg.186]    [Pg.225]    [Pg.233]    [Pg.12]   
See also in sourсe #XX -- [ Pg.836 ]




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