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Isoelectronic centres acceptors

It was mentioned in Sect. 1.3.2 that in semiconductors, isoelectronic impurity centres could present a relatively strong attracting potential for electrons or holes. Excitons can be trapped by or created at these isoelectronic centres to form an isoelectronic bound exciton (IBE). The electron (hole) of this exci-ton is also more strongly bound to the isoelectronic centre than in classical excitons and the second constituent of the exciton, hole (electron) can be considered to be bound to a compound negative or positive ion. These structures are similar to those of neutral donors or acceptors and they are called isoelectronic donors or acceptors [104]. When formed by near band-gap or above band-gap laser illumination, the long lifetimes of these IBEs result in sharp PL lines, and this has for some time aroused interest for these centres as potential near IR radiation emitters. [Pg.249]

In a semiconductor, substitutional FAs from the same column of the periodic table as the one of the crystal atom they replace are usually electrically inactive and they are called isoelectronic with respect to the semiconductor. It can occur, however, that for some isoelectronic impurities or electrically-inactive complexes, the combination of the atomic potential at the impurity centre with the potential produced by the local lattice distortion produces an overall electron- or hole-attractive potential in a given semiconductor. This potential can bind an electron or a hole to the centre with energies much larger than those for shallow electrically-active acceptors or donors. The interaction of these isoelectronic impurities traps the free excitons producing isoelectronic bound excitons which display pseudo-donor or pseudo-acceptor properties. This is discussed later in this chapter in connection with the bound excitons, and examples of these centres are given in Chaps. 6 and 7. [Pg.7]

This seems to be also valid for excitons bound to deep neutral centres not necessarily isoelectronic, giving pseudo-donors or pseudo-acceptors. [Pg.250]


See other pages where Isoelectronic centres acceptors is mentioned: [Pg.16]    [Pg.169]    [Pg.323]    [Pg.1184]    [Pg.12]    [Pg.480]    [Pg.86]    [Pg.1184]    [Pg.4638]    [Pg.413]    [Pg.324]    [Pg.19]   
See also in sourсe #XX -- [ Pg.323 ]




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