Intrinsic stacking fault,

Using the constructed potentials the y-surface for the (111) plane was calculated. (For more details see Girshick and Vitek 1995). T e lowest energy minimum on this surface corresponds to the ideal Llo structure. However, there are three different metastable stacking fault type defects on (111) the antiphase boundary (APB), the complex stacking fault (CSF) and the superlattice intrinsic stacking fault (SISF). The displacements... 

Rosengaard and Skriver [5] have demonstrated, that in all 3d, 4d, and 5d transition metals, the intrinsic stacking fault energy, 7, can be accurately estimated from the relation,... 

Figure 1 Intrinsic stacking fault energy for chemically disordered solid solution Al-X (where X=Cu or Mg) as a function of composition.

Figure 2 Comparison between intrinsic stacking fault energy (solid line) with two times the energy difference between the hep and the fee structure (dashed line) for Al-Cu (left panel) and Al-Mg (right panel) solid solution as a function of alloy composition.

Figure 11.51 Schematic illustrating how intrinsic stacking faults along i.e. faults in the successive stacking of the ABC layers ( 111 planes) of an fee crystal, give rise to a hep region. The black dots represent atoms in the 110 plane while the grey dots represent atoms immediately below. Reproduced with permission from reference [128]. (2008) Wiley-VCH Verlag GmbH Co. KGaA.

Fig. 9.31. Computational box used to compute the energy of an intrinsic stacking fault in A1 (adapted from Wright et al. (1992)).

Vitek V. Intrinsic stacking faults in body-centered cubic crystals. Philos. Mag. 1968 18 773-786. 

Figure 54. High-resolulion image of a fragment of a C > molecular crystal bright dots represent rows of C ) molecules Note the presence of a stepped intrinsic stacking fault (in S). Also a Frank-type partial dislocation and its associated stacking fault...

Intrinsic Stacking fault energy in silicon, 249 Inverse spinels, 285 Ion beam cleaning, 126 effect on hardness, 126-127 Ion implantation, 126-127 in AI2O3, 262-263 Ionic carbides, 294-296 Ionic ceramics, 209 Indium phosphide (InP), hardness, 83 anisotropy, 77... 

Fig. 4. 60° dislocation in the type I glide plane (shuffle set), after Amelinckx [16]. (a) Undissodated and (b) dissociated with formation of an intrinsic stacking fault. In that case, the stacking fault is of type II and is associated to a dislocation dipole at its right end (see Ref. [16]). 

ISF intrinsic stacking fault MBT metal-base transistor... 

PZT lead zirconate titanate (ceramic) SISF superconductor superlattice intrinsic stacking fault... 

Fig. 21. Defects formed by condensation of vacancies onto dislocation loops formed by collapse of small vacancy clusters, (a) Dislocation loops in 99.999% Al, quenched from 610°C into liquid N2, then aged 1 hr at — 80°C and 2 hr at 60°C. The defect is a Frank sessile dislocation enclosing an intrinsic stacking fault. Magnification 27,000 x. From Dr. K. Y. Chen, Northwestern University, Evanston, Illinois, (b) Stacking fault tetrahedra in 99.999% Au quenched from 1038° into -35°C brine and aged at 25°C. The tetrahedra (some are truncated) are bound by intrinsic stacking faults and dislocations at the edges called stair rod dislocations. Magnification 70,000 X. From Dr. J. A. McComb, Northwestern University, Evanston, Illinois.

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