Photoluminescence InGaN

The compositions of the ternary layers were evaluated from the lattice parameters measured using X-ray diffraction (see Datareview A1.2) and from the positions of the photoluminescence peaks. Both methods gave the same results, if the bowing parameters of 3.2 eV and 0.1 eV, for InGaN and AlGaN, respectively, were used (as proposed by Takeuchi et al [25] for strained layers on relaxed GaN on sapphire). 

Gontijo I, Boroditsky M, Yablonovitch E, Keller S, Mishra U.K., DenBaars S.P. (1999) Coupling of InGaN quantum-well photoluminescence to silver surface plasmons Phy. Rev. B 60 11564-11567. 

Figure 1. Photoluminescence from (a) our blue NC film, (b) our green NC film (c) our yellow NC film (d) our red NC (e) a top-view micrograph of our fabricated near-UV InGaN/GaN LED.

Figure 2 Photoluminescence mapping of an InGaN MQW structure on 4 inch sapphire. No edge exclusion was applied.

Chapter 3. Photoluminescence in GaN, InGaN and Their Applications in Photonics Annamraju Kasi Viswanath... 

The spatial variations of the InGaN thickness and composition may lead to multicolor emissions. Figure 14.6 shows microscopic photoluminescence (PL) spectra acquired at room temperature (RT) using a confocal microscopy system. The spatial resolution of the system is less than 500 run. Hence, each... 

N Yoshimoto, T Matsuoka, T Sasaki, A Katsui. Photoluminescence of InGaN films grown at high temperature by metalorganic vapor phase epitaxy. Appl Phys Lett 59 2251, 1991. 

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