Implantation simulation code

In this chapter, we review the current status of doping of SiC by ion implantation. Section 4.2 examines as-implanted depth profiles with respect to the influence of channeling, ion mass, ion energy, implantation temperature, fluence, flux, and SiC-polytype. Experiments and simulations are compared and the validity of different simulation codes is discussed. Section 4.3 deals with postimplant annealing and reviews different annealing concepts. The influence of diffusion (equilibrium and nonequilibrium) on dopant profiles is discussed, as well as a comprehensive review of defect evolution and electrical activation. Section 4.4 offers conclusions and discusses technology barriers and suggestions for future work. 

Because of the high scattering of experimental results and the great difficulty in reaching the fully cohesive failure of wooden adhesive Joints, a numerical analysis has been made to give a better knowledge of their mechanical behaviour for various parameters (adhesive used. Joint thickness, loading mode, etc...). For the PU resin tested previously in shear, such an analysis has been made on two steps first simulations have been made on bulk adhesive specimen to determine the mechanical behaviour of the resin and the numerical results obtained have been implanted in the FE code CASTEM 2000 [21] for the mTENF bonded specimen loaded by shear. 

Fig. 13.3 Concentration depth profiles of boron atoms implanted at 100 keV into polyimid for different boron fluences (in atoms cm ). Rp (TRIM) is a projection of the ion path length on the original ion direction as simulated by TRIM code.

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