Impact of Nucleation Conditions on Phase Purity

Nucleation is generally believed to be the most critical step for obtaining high-quality C-plane GaN layers [40-42]. This is thought to be also applicable 

Growth was carried out in a custom-designed, solid-source three-chamber MBE system equipped with a radio-frequency plasma source. The N source is operating at a plasma power of 250-500 W with an N2 flow of 0.3-0.4 seem, yielding a GaN growth rate of 0.25-0.4 pm/h. The base pressure in the growth chamber is kept below 10 ° Torr by an ion-getter pump and a Ti-sublimation 

---