Hydrogenation implantation

An example of depth profiling of hydrogen implanted into Si is shown in Eig. 3.64 [3.177]. Measured energy spectra of H recoils are given for impact of 6-MeV C ions. H identification was achieved by the AE-E technique and use of ion-in-... 

The passivation of dry-etching damage by low energy hydrogen implantation from a Kaufman ion source (0.4 keV) has also been reported (Singh et al., 1984b). The Si samples were either initially bombarded with a... 

Fig. 14. Si—H stretching features produced by hydrogen implantation into Si at 80 K (solid line) and after annealing at 200 K (dashed line). [Reprinted with permission from The American Physical Society, Stein, H.J. (1979). Phys. Rev. Lett. 43, 1030.]...

Fig. 15. Annealing behavior of BC and T site components of H in Si determined by ion channelling together with the annealing behavior of IR absorption lines in hydrogen-implanted Si. [Reprinted with permission from The American Physical Society, Bech Nielsen, B. (1988). Phys. Rev. B 37, 6353.]...

This brings us to the subject of standards. In this connection a standard is simply a sample with a known hydrogen content that is used for convenience to calibrate the overall counting efficiency of a particular setup, i.e., to determine the factor AfICalibration standards must be stable under irradiation. While plastic foils of known composition can be used if precautions are taken (Rudolph et al., 1986), their intrinsic instability makes them unsuitable. The standard used by most groups is hydrogen-implanted silicon, which has the advantages that it is easily prepared, the implanted dose can be measured to 5%, and the amount of implanted hydrogen is stable at room temperature and under MeV 15N irradiation, as discussed later. 

There is some disagreement in the literature as to the value of the (4He, H) elastic scattering cross section. Values differing by almost a factor of two have been reported, as reviewed by Paszti et al. (1986). The cross section is strongly non-Rutherford, but ab initio calculations have been reported that agree well with the trend of experimental data and could be used in simulation calculations (Tirira et al., 1990). The cross section for deuterium analysis has a resonance near a 4He+ energy of 2.15 MeV, which allows enhanced sensitivity. Detailed measurements of this cross section have been reported by Besenbacher et al. (1986). In practice, rather than calculate an experiment s calibration from first principles, calibration standards are usually used hydrogen-implanted silicon standard are the norm. 

J. Roth, unpublished data. In W. Moller, B.M.U. Scherzer, Modeling of hydrogen implantation in graphite, J. Appl. Phys. 64 (1988) 4860... 

After bonding and annealing to produce the complete delamination of the hydrogen-implanted wafer, the thickness of the transferred layer is measured by... 

Fig. 11.9. Low magnification cross-section TEM bright field image of the hydrogen-implanted silicon wafer in the as-implanted state...

Cerofolini, G.F., Meda, L., Balboni, R., Comi, F., Frabboni, S., Ottaviani, G., Tonini, R., Anderle, M., Canteri, R. Hydrogen-related complexes as the stressing species in high-fluence, hydrogen-implanted, single-crystal sihcon. Phys. Rev. B 46, 2061 (1992) Chabal, Y.L., Weldon, M.K., Caudano, Y., Stefanov, B.B., Raghavachari, K. Spectroscopic studies of H-decorated interstitials and vacancies in thin-film sihcon exfoliation. Physica B 273-274, 152 1999... 

Hochbauer, T., Misra, A., Verda, R., Nastasi, M., Mayer, J.W., Zheng, Y., Lau, S.S. Hydrogen-implantation induced sihcon surface layer exfoliation. Phil Mag. B 80, 1921 (2000)... 

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