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Hydrogen, SIMS analysis

A more dramatic failure results in peel strengths of 0-10 g/mm and is characterized as an adhesive failure at the polyimide/metal oxide interface.This was the only failure mode observed in Ti and Zr films. Isotopically tagged water used with SIMS analysis shows that on annealing water reacts with the Ti with oxygen segregating to the metal/polyimide interface and hydrogen penetrating into the bulk of the Ti, in these samples. [Pg.297]

Out of the seven crystals studied [100], five crystals show a water content in accord within l-3a with that derived by c-parameter [126]. A discrepancy by 10%-15% for SIMS analysis of H2O in VUT187 13 and VUT187 28 may be attributed to residual matrix effects on the relative-to-Si hydrogen ionization, both due to... [Pg.1041]

Bech Nielsen et al. (1988) also made a channeling study of the 2H in B-2H complexes that was similar in principle to that just described but differed in details of technique and in some of the conclusions arrived at. Also, they did not investigate the position of the boron atoms. They used Si uniformly doped with a high (1 x 1019 B/cm3) boron concentration, rather than implanted boron. The surface was etched off after hydrogenation, but no SIMS data was presented to confirm the uniform hydrogen concentration assumed. The penetration depth of the H was given as —7000 A. The channeling measurements were performed at 30 K. For analysis of their data Bech Nielsen et al. used the same model, based on the assumption of statistical equilibrium (SE) of the channeled ions, already described in connection with the measurements of implanted deutrium... [Pg.229]

As for silicon, secondary ion mass spectrometry (SIMS) is the most widely used profiling analysis technique for deuterium diffusion studies in III-V compounds. Deuterium advantageously replaces hydrogen for lowering the detection limit. The investigations of donor and acceptor neutralization effects have been usually performed through electrical measurements, low temperature photoluminescence, photothermal ionization spectroscopy (PTIS) and infrared absorption spectroscopy. These spectroscopic investigations will be treated in a separated part of this chapter. [Pg.465]


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See also in sourсe #XX -- [ Pg.1019 ]




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Analysis hydrogen

SIM

SIMS

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