HTP film

The reducticxi of the process tenperature results in very little reaction between the film and the substrate as shown by the Auger electron spectroscopy (AES) results of figs. 9a and 9b. In fig. 9a the AES results Indicate a reacted layer on the order of 100 ntn in a HTP film of the order of 350 nm. However, in the LTP film shown in fig. 9b the interface reacticxi extends over a region of less than 12 nm, close to the Instrument resolution of the technique. This result is very important for the fabrication of structures containing abn rt junction. 

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