Hot-wire chemical vapor deposition HWCVD

Lau, K. K. S. (2001), Hot-wire chemical vapor deposition (HWCVD) of fluorocarbon and organosilicon thin films, Thin Solid Films, 395(1-2), 288-291. 

Another way of plasmachemical preparation involves the use of electron cyclotron resonance for plasma assisted chemical vapor deposition (ER-CVD) [7]. An alternative method to prepare undoped microcrystalline (pc) SiC H alloy films is developed recently as so-called hot wire chemical vapor deposition (HWCVD) technique [8]. 

Hot Wire Chemical Vapor Deposition (HWCVD-technique) yields devicequality material of Si C H-aUoy-films from pure methane and silane... 

Table 7.2 summarizes various subtypes of CVD polymerization processes. These methods differ in the means by which the CVD chemistry is driven (plasma, thermal, or UV). For hot wire chemical vapor deposition (HWCVD) and initiated chemical vapor deposition (iCVD), no plasma excitation or UV exposure is utilized during the polymerization, eliminating the possibility for forming defects in the films via these... 

In hot-wire CVD (HWCVD), hot wires are used to initiate the reaction and the substrate is kept in lower temperature. In this case the thermal activation occurs in a spatially separated location, and the substrate is the deposition surface. In such a process the chemical activation of vapor and the deposition of materials are spatially separated, whereas in the ordinary CVD both processes occur in the same place. 

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