Homogeneous semiconductor sensors

As expected, homogeneous semiconductor sensors in planar technology are characterized by much lower response time compared to sensors in the form of sinter pellets. Modern thin-film techniques allow precise doping of the material. 

In this part we dwell on the properties of the simplest radicals and atoms in the adsorbed layer of oxide semiconductors as well as analyse the quantitative relationships between concentrations of these particles both in gaseous and liquid phases and on oxide surfaces (mostly for ZnO), and effect of former parameters on electrophysical parameters. Note that describing these properties we pursue only one principal objective, i. e. to prove the existence of a reliable physical and physical-chemical basis for a further development and application of semiconductor sensors in systems and processes which involve active particles emerging on the surface either as short-lived intermediate formations, or are emitted as free particles from the surface into the environment (heterogeno-homogeneous processes). 

Construction and Characterization of Semiconductor Sensors. Semiconductor gas sensors are characterized by their simple construction. A schematic overview of the construction principle of a homogeneous semiconducting gas sensor is provided in Figure 2 A [31]. Sensor operation is based on a change in the surface resistance (or conductance) of an oxidic microcrystalline semiconductor in the presence of interacting gases. A time-dependent record reflecting transient expo-... 

The monograph is intended for the scientists and engineers specialized in physical-chemistry of heterogeneous and heterogeneous-homogeneous processes and designing of semiconductor chemical sensors. 

Figure 2. A) Schematic drawing of a homogeneous semiconducting gas sensor B) Result of transient exposure of the sensor to a gas that increases the conductance [311 a) Semiconductor b) Ceramic c) Heater d) Contacts (with permission from Elsevier. Amsterdam)...

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