Hole mobility definition

The hole mobility as a function of temperature is shown in Figure 18. The values obtained are five to ten times higher than the mobility of impurity cations in this liquid. Above the melting point the mobility is thermally activated with an activation energy of 32 meV. At higher temperatures a decrease in mobility with temperature is observed. Definite identification of the fast carriers as holes was effected by reaction with tetramethylsilane as an additive. Since the energy for the creation of an electron/hole pair is 9.2 eV, TMSi (with Ii = 8.05 eV) can be ionized in an encounter. 

Since the fraction of electrons and holes, although very small, depends on the (local) oxygen potential and since the mobility of the electronic defects is far larger than that of the ionic defects, the electronic conductivity may, by continuously changing the oxygen potential, eventually exceed the ionic conductivity. By definition, the transference number is t-loa = erion/(crion + crei)> which explicitly yields... 

It may be obtained experimentally from a plot of log p vs at a constant temperature. In many organic disordered systems, the hole and electron mobilities were reported and clearly follow the PF relation shown in Equation 3.4 [23-26]. The PF model, however, has a serious deficiency. According to Equation 3.5, it makes a definitive prediction on the value of Ppp. Yet, it turns out that most experimental results deviate significantly from the theoretical value of Ppp. 

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