HOD film growth on p-SiC 100 layer

Regarding the BEN mechanism to synthesize HOD films [225] (i) at Fb = —250 V, the bias current /b was higher when the diamond-coated substrate holder was used (= 100mA) than when uncoated or alumina-coated holders were used ( 20mA), suggesting that electrons are emitted from diamond during BEN, (ii) the BEN started from the edge of the substrate and proceeded toward the center, and 

Before this work, to obtain a smooth surface consisting of aligned (100) faces, it was necessary to grow diamond films to more than 50-pm thicknesses. In this work, however, a lateral growth of diamond was undertaken using (111 [-growth conditions in the final step, and a smooth surface was achieved. More concretely, the growth procedure used is as follows  

A similar study was done in Refs. [6, 252] using the process conditions given in Table H,2. In the AFM image of the smooth surface [252], wrinkles were 

In Refs. [253-255], BEN experiments were done by ECR plasma CVD under conditions shown in Table H.2. The substrate was a heteroepitaxial p-SiC(lOO) layer of 0.5-pm thickness deposited on Si [256] by low pressure CVD (LPCVD). Like in 

a stripe structure was formed at the substrate surface immediately after the BEN treatment under R O-STorr, 7 s = 750°C, and Eb = —30 V, and the SiC(lOO) surface became very rough. By the end of the BEN treatment, about 30% of diamond particles were heteroepitaxially oriented with respect to SiC(lOO) over a 40-mm square area. The nucleation density was not influenced by the CEl4 concentration, and remained to be about 10 -10 /cm for CEI4/E12 50%. Unlike the standard BEN treatment at 10-30 Torr, it took about 60 min to achieve BEN of diamond, presumably because the hydrocarbon ion flux was lower due to low P. The nucleation density and the ratio of the oriented nuclei at J s = 400°C were 10 -10 /cm and only 10%, respectively. The nucleation density at Ts = 400°C was similar to that at Eg = 700-800 °C, indicating that the nucleation density was quite insensitive to Eg for ECR plasma. 

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