High-temperature CVD

Ellison, A., Silicon Carbide Growth by High Temperature CVD Techniques, Ph.D. thesis, Linkoping University, 1999. 

Therefore, it is quite logical to emphasize low temperature MOCVD (wafer temperature of less than roughly 500°C) of BST tWn films even though the status of the research is still behind that of the high temperature deposition process (wafer temperature of higher than roughly 600°C). Data on films from high temperature CVD is discussed only for reference purposes. 

Ellison A, Zhang J, Peterson J, Henry A, Wahab Q, Bergman, JP, Makarov YN, Vorob ev A, Vehanen A, Janzen E (1999) High temperature CVD growth of SiC. Mater Sci Eng B61-62 113-120... 

Figure 3.41. High-temperature CVD technique (a) schematic of the CVD reactor [23] (b) monolithic SiC components [75]...

The presented high temperature CVD procedure using metal chloride starting materials is an effective and easy-to-handle method for the preparation of improved metal doped photocatalytic materials. The role of defect sites in the catalytic performance needs further verification. 

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