High Temperature Chemical Vapor Deposition challenges

Elemental boron is a light element with a density of 2.34 g/cm It has a high melting point (2080°C), is hard, brittle and is an electrical insulator (resistivity 1.8 x 10 pQcm at 20°C) [10]. The element is barely reactive at room temperature, however it reacts with almost every element at elevated temperature. Thus, the preparation of pure boron presents a challenge, since impurities are incorporated readily into the boron lattice [221]. Boron has been prepared by chemical vapor deposition as early as 1911, when Weintraub deposited elemental boron from a mixture of BCI3 and Hi onto a heated wire [222]. Today, the CVD of boron is used to prepare coatings (e.g., for the first wall in fusion reactors) as well as fibers. Boron can be prepared by the hydrogen... 

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